Quantum Confinement and Electronic Transport in II–IV Semiconductor Quantum Dots

II–IV semiconductor quantum dots (QDs) have emerged as promising nanomaterials for next-generation electronic and optoelectronic applications due to their size-dependent tunable properties and enhanced carrier dynamics. This paper presents an overview of the synthesis approaches, structural characteristics, and electronic properties of II–IV QDs, emphasizing their role in nanoscale device engineering. The influence of quantum confinement on bandgap modulation, charge transport, and optical response is critically discussed. Furthermore, the integration of these QDs into advanced electronic devices is examined, highlighting their potential for low-power, high-speed, and miniaturized systems. Key challenges related to material uniformity, stability, and large-scale fabrication are also addressed. The study concludes by outlining future research directions aimed at improving device performance and enabling the practical deployment of II–IV quantum dot-based technologies in modern electronics.